Patent Title:
Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
Assignee:
Inventors:
Kulbinder K. Banger, Aloysius F. Hepp, Jerry D. Harris, Michael Hyun-Chul Jin, Stephanie L. Castro
Patent:
Summary related to CVD Ultrasonic Spray of Chalcopyrites:
A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.
A thin film study was performed using a CVD technique to apply ternary chalcopyrites from a SSP according to the invention. A vertical cold wall reactor was used with a 120 kHz atomizing nozzle. The aerosol was delivered into the reactors by argon carrier gas with a typical flow rate of 4 L/min.
